Objectives: studying the oxide chemistry (composition) and physics (electronic structure & properties) for implementation in oxide electronics and resistive switching device technologies, including band-gap engineering
Mechanism proposed by Goldfarb and HP co-workers for the reversible resistance change inside the conduction channel of a memristor in course of switching
Means:
Physical Vapor Deposition (PVD) of transition-metal oxide films and multilayers on functional substrates
Device fabrication and performance
Tools:
Core-level and valence-band photoemission spectroscopy for the film composition and electronic band structure measurements
Transport measurements
Comments