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  • Writer's pictureMiriam Bench

Electronic Structure of Oxides for Memristor Technology (with Hewlett-Packard Labs, Palo Alto)

Objectives: studying the oxide chemistry (composition) and physics (electronic structure & properties) for implementation in oxide electronics and resistive switching device technologies, including band-gap engineering





Mechanism proposed by Goldfarb and HP co-workers for the reversible resistance change inside the conduction channel of a memristor in course of switching


Means:

  • Physical Vapor Deposition (PVD) of transition-metal oxide films and multilayers on functional substrates

  • Device fabrication and performance

Tools:

  • Core-level and valence-band photoemission spectroscopy for the film composition and electronic band structure measurements

  • Transport measurements

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